| 摘要 |
PURPOSE: A substrate processing apparatus is provided to uniformly process a substrate by including a first nozzle to supply a process gas to the center of an excitation space and a second nozzle with a ring shape to surround the excitation space. CONSTITUTION: A process chamber(100) provides a space for processing a substrate. A substrate support unit(200) includes a dielectric substrate(210), a bottom electrode(220), a heater(230), a support plate(240), and an insulation plate(270). A gas supply unit(300) supplies a process gas to an excitation space located on the upper side of the substrate support unit. The gas supply unit includes a first nozzle(310) to supply the process gas to the center of the excitation space and a second nozzle(320) with a ring shape to surround the excitation space. A supply path(321) to supply the process gas to an edge part of the excitation space is formed on the inner side of the second nozzle. A plasma generating unit(400) excites the process gas supplied to the process chamber by applying high frequency power to the process chamber.
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