| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a thermal diffusion performance from a semiconductor element to a multilayer substrate, and improve a bond strength of the multilayer substrate and the semiconductor element. <P>SOLUTION: A semiconductor power module 10 comprises a ceramic multilayer substrate 100, a junction layer 110, a diffusion layer 120 and a semiconductor element 130. The junction layer 110 is a planar thin film layer arranged on a first surface 105 of the ceramic multilayer substrate 100 and including a conductive junction part 111 electrically connecting the semiconductor element 130 and the ceramic multilayer substrate 100, and an insulating junction part 112 insulating the semiconductor element 130 and the ceramic multilayer substrate 100. This way, the semiconductor element 130 and the ceramic multilayer substrate 100 can be bonded while inhibiting an occurrence of void between the semiconductor element 130 and the ceramic multilayer substrate 100. A thermal diffusion performance from the semiconductor element 130 to the ceramic multilayer substrate 100 and a bond strength of the ceramic multilayer substrate 100 and the semiconductor element 130 can be improved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
