发明名称 |
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER |
摘要 |
According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.
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申请公布号 |
US2013062612(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201213407169 |
申请日期 |
2012.02.28 |
申请人 |
SHIODA TOMONARI;HUNG HUNG;HWANG JONGIL;YOSHIDA HISASHI;SUGIYAMA NAOHARU;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIODA TOMONARI;HUNG HUNG;HWANG JONGIL;YOSHIDA HISASHI;SUGIYAMA NAOHARU;NUNOUE SHINYA |
分类号 |
H01L29/20;H01L21/20 |
主分类号 |
H01L29/20 |
代理机构 |
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