发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL |
摘要 |
Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.
|
申请公布号 |
US2013061801(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201213566070 |
申请日期 |
2012.08.03 |
申请人 |
FUJIWARA SHINSUKE;HARADA SHIN;NISHIGUCHI TARO;INOUE HIROKI;OOI NAOKI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIWARA SHINSUKE;HARADA SHIN;NISHIGUCHI TARO;INOUE HIROKI;OOI NAOKI |
分类号 |
C30B23/02 |
主分类号 |
C30B23/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|