发明名称 A PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
摘要 <p>A method for the manufacture of at least part of a thin-film device is described wherein, said method comprise: forming one or more indentations in a substrate, preferably a plastic substrate, an indentation comprising sidewalls and a base; filling at least one of said one or more indentations with a first ink, said first ink comprising a first material precursor, preferably a first metal-, semiconductor-, or a metal-oxide precursor; and, annealing at least a portion of said first ink such that a surface of said base inside the indentation is dewetted and a narrowed first structure of the first material inside of the indentation is formed.</p>
申请公布号 WO2013034312(A1) 申请公布日期 2013.03.14
申请号 WO2012EP03795 申请日期 2012.09.10
申请人 TECHNISHE UNIVERSITEIT DELFT 发明人 ISHIHARA, RYOICHI;VAN DER ZWAN, MICHIEL
分类号 H01L27/12 主分类号 H01L27/12
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