发明名称 low temperature thin film deposition mathod using plasma
摘要 PURPOSE: A low temperature thin film deposition method using plasma is provided to secure the deposition quality of a thin film as a low temperature deposition system. CONSTITUTION: A low temperature thin film deposition method using plasma comprises the next step. The plasma is generated inside a thin film deposition chamber. Positive voltage is added to a metal-substrate to guide electronics of plasma toward the metal-substrate. The accelerated electronics crashes the surface of the metal-substrate in order to heat the metal-substrate.
申请公布号 KR101243284(B1) 申请公布日期 2013.03.13
申请号 KR20090091735 申请日期 2009.09.28
申请人 发明人
分类号 C23C14/34;C23C14/50;C23C14/56 主分类号 C23C14/34
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