发明名称 Leakage and NBTI reduction technique for memory
摘要 In one embodiment, an integrated circuit includes a logic circuit and a memory circuit that includes multiple bit lines and bit line precharge circuits. The memory circuit may include level shifters for control signals generated from logic circuit inputs, including one or more level shifters that generate precharge enable signals to control the bit line precharge circuits. The level shifters for the bit line precharge circuits may also be controlled, during periods of time that the memory circuit is idle, by a control signal (FloatBL herein). If the FloatBL signal is asserted, the bit line precharge circuits may be disabled. In some embodiments, the FloatBL signal may also disable bit line bit line hold circuits on the bit lines. In some embodiments, when the memory circuit is exiting an idle state, the bit line precharge circuits may be enabled in a staggered fashion.
申请公布号 US8395954(B2) 申请公布日期 2013.03.12
申请号 US201213474377 申请日期 2012.05.17
申请人 CAMPBELL BRIAN J.;HESS GREG M.;HUANG HANG;APPLE INC. 发明人 CAMPBELL BRIAN J.;HESS GREG M.;HUANG HANG
分类号 G11C7/00 主分类号 G11C7/00
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