发明名称 |
Memory arrays and methods of fabricating memory arrays |
摘要 |
A memory array includes a plurality of memory cells formed on a semiconductor substrate. Individual of the memory cells include first and second field effect transistors respectively comprising a gate, a channel region, and a pair of source/drain regions. The gates of the first and second field effect transistors are hard wired together. A conductive data line is hard wired to two of the source/drain regions. A charge storage device is hard wired to at least one of the source/drain regions other than the two. Other aspects and implementations are contemplated, including methods of fabricating memory arrays. |
申请公布号 |
US8394699(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20100828915 |
申请日期 |
2010.07.01 |
申请人 |
HALLER GORDON A.;TANG SANH D.;MICRON TECHNOLOGY, INC. |
发明人 |
HALLER GORDON A.;TANG SANH D. |
分类号 |
H01L21/336;H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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