SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve electrical characteristics by using an oxide semiconductor. CONSTITUTION: A gate insulating layer(130) is formed on a gate electrode(106). An oxide semiconductor layer(114) is formed on a gate insulating layer. A source electrode(116) and a drain electrode(118) touch the oxide semiconductor layer. The gate insulating layer includes an oxide layer(112). The oxide semiconductor layer touches the oxide layer.