MAGNETIC RANDOM ACCESS MEMORY DEVICE

摘要

The present invention proposes an electronic memory device comprising a memory line including a memory domain. The memory line may contain a number of memory domains and a number of fixed domains, wherein each memory domain stores a single binary bit value. A multiferroic element may be disposed proximate to each memory domain allowing the magnetization of the memory domain to be changed using a spin torque current, and ensuring the stability of the magnetization of the domain when it is not being written. The domain boundary between the memory domain and one of its adjacent fixed domains may thereby be moved. An antiferromagnetic element may be disposed proximate to each fixed domain to ensure the stability of the magnetization of these. The value of each memory domain may be read by applying a voltage to a magnetic tunnel junction comprising the memory domain and measuring the current flowing through it.