发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending from the first region to the second regions on the substrate; interlayer insulating layers formed over the substrate; insulating layers formed in first open regions of the interlayer insulating layers and the first group of conductive lines in the second region; and contact plugs contacting second group of conductive line formed in second open regions of the interlayer insulating layer in the second region.
申请公布号 US2013056878(A1) 申请公布日期 2013.03.07
申请号 US201113295450 申请日期 2011.11.14
申请人 KIM MI-HYE;NAM BYUNG-SUB 发明人 KIM MI-HYE;NAM BYUNG-SUB
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
代理机构 代理人
主权项
地址