摘要 |
Embodiments of the invention include methods of in situ cleaning of deposited materials from the surfaces of processing chambers, e.g., MOCVD processing chambers. The cleaning process increases the time between preventative maintenance cleanings and reduces chamber down-time by targeting the removal of the layers deposited on the interior surfaces of the chamber body and/or liner, as well as the process kit components. The cleaning process occurs while shielding the showerhead and a carrier plate from at least some of the cleaning gases used during the cleaning process. To prevent chemical attack of the layers already deposited on the surface of the showerhead, and to prevent poisoning of the layers deposited after performing the cleaning process, the showerhead and the carrier plate are shielded from the cleaning gas by delivering an inert gas through the showerhead and across the surface of the carrier plate and/or cleaning plate during the cleaning. |
申请人 |
APPLIED MATERIALS, INC.;LU, JIANG;CHUNG, HUA;WANG, YAN;SHEN, KUAN CHIEN KERIS;DONG, XIZI;DUBOUST, ALAIN;HSU, WEI-YUNG;GRIFFIN, KEVIN S.;OLGADO, DONALD J.K. |
发明人 |
LU, JIANG;CHUNG, HUA;WANG, YAN;SHEN, KUAN CHIEN KERIS;DONG, XIZI;DUBOUST, ALAIN;HSU, WEI-YUNG;GRIFFIN, KEVIN S.;OLGADO, DONALD J.K. |