发明名称 IN SITU PROCESS KIT CLEAN FOR MOCVD CHAMBERS
摘要 Embodiments of the invention include methods of in situ cleaning of deposited materials from the surfaces of processing chambers, e.g., MOCVD processing chambers. The cleaning process increases the time between preventative maintenance cleanings and reduces chamber down-time by targeting the removal of the layers deposited on the interior surfaces of the chamber body and/or liner, as well as the process kit components. The cleaning process occurs while shielding the showerhead and a carrier plate from at least some of the cleaning gases used during the cleaning process. To prevent chemical attack of the layers already deposited on the surface of the showerhead, and to prevent poisoning of the layers deposited after performing the cleaning process, the showerhead and the carrier plate are shielded from the cleaning gas by delivering an inert gas through the showerhead and across the surface of the carrier plate and/or cleaning plate during the cleaning.
申请公布号 WO2013033428(A2) 申请公布日期 2013.03.07
申请号 WO2012US53186 申请日期 2012.08.30
申请人 APPLIED MATERIALS, INC.;LU, JIANG;CHUNG, HUA;WANG, YAN;SHEN, KUAN CHIEN KERIS;DONG, XIZI;DUBOUST, ALAIN;HSU, WEI-YUNG;GRIFFIN, KEVIN S.;OLGADO, DONALD J.K. 发明人 LU, JIANG;CHUNG, HUA;WANG, YAN;SHEN, KUAN CHIEN KERIS;DONG, XIZI;DUBOUST, ALAIN;HSU, WEI-YUNG;GRIFFIN, KEVIN S.;OLGADO, DONALD J.K.
分类号 H01L21/205;H01L21/02;H01L21/302 主分类号 H01L21/205
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