| 摘要 |
<p>PURPOSE: A method for arranging fine patterns of a semiconductor device is provided to effectively suppress a pattern bridge defect in an exposure process by improving a mask layout of a photomask. CONSTITUTION: A first photomask with a first cell line pattern(111) and a first dummy line pattern(113) is formed. The first cell line pattern is arranged in an X axis direction. The first dummy line pattern is arranged in a Y axis direction. A second photomask with a second cell line pattern(131) and a second dummy line pattern(133) is formed. The second cell line pattern is arranged in the Y axis direction. The second dummy line pattern is arranged in the X axis direction. A resist layer is firstly exposed by using the first photomask. The resist layer is secondly exposed by using the second photomask. A first mask layout(110) is extracted as a layout including the first cell line patterns and the first dummy line patterns. A second mask layout(130) is extracted as a layout including the second cell line patterns and the second dummy line patterns. [Reference numerals] (AA) Cell area; (BB) Dummy area</p> |
