| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photovoltaic device with excellent solar cell characteristics. <P>SOLUTION: A photovoltaic device comprises: a semiconductor substrate 1 of a first conductive type with an impurity diffusion layer 3; an antireflection film 4 formed on the impurity diffusion layer 3; a first electrode 5 electrically connected to the impurity diffusion layer 3; a rear surface insulation film 8 being formed on the opposite side of the semiconductor substrate 1, the rear surface insulation film 8 having a plurality of openings 8a that reach the opposite side of the semiconductor substrate 1; a plurality of second electrodes 9 electrically connected to the opposite side of the semiconductor substrate 1; and a rear surface reflective film 10 being formed to cover over at least the rear surface insulation film 8. The openings 8a have nearly rectangular shapes in an in-plane direction of the rear surface of the semiconductor substrate 1, and are arranged in nearly parallel rows in the lateral direction of the openings 8a. The second electrodes 9 have nearly the same shapes as the openings 8a, and are arranged in nearly parallel rows in the lateral direction of the second electrodes 9, with the pitch between the electrodes in the lateral direction being 1.5 to 3.0 mm, and the width of the second electrodes 9 in the lateral direction being 20 to 200 μm. <P>COPYRIGHT: (C)2013,JPO&INPIT |
