发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A semiconductor storage device has a plurality of memory cells each having a control gate that are formed on a well. The semiconductor storage device has a control circuit that applies a voltage to the well and the control gates. In an erase operation of the memory cell, the control circuit applies a first pulse wave of a first erasure voltage that rises stepwise to the well and then applies a second pulse wave of a second erasure voltage to the well.
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申请公布号 |
US2013058171(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213425121 |
申请日期 |
2012.03.20 |
申请人 |
SHIINO YASUHIRO;IRIEDA SHIGEFUMI;NAKAI KENRI;TAKAHASHI EIETSU;UENO KOKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIINO YASUHIRO;IRIEDA SHIGEFUMI;NAKAI KENRI;TAKAHASHI EIETSU;UENO KOKI |
分类号 |
G11C16/06;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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