发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 A semiconductor storage device has a plurality of memory cells each having a control gate that are formed on a well. The semiconductor storage device has a control circuit that applies a voltage to the well and the control gates. In an erase operation of the memory cell, the control circuit applies a first pulse wave of a first erasure voltage that rises stepwise to the well and then applies a second pulse wave of a second erasure voltage to the well.
申请公布号 US2013058171(A1) 申请公布日期 2013.03.07
申请号 US201213425121 申请日期 2012.03.20
申请人 SHIINO YASUHIRO;IRIEDA SHIGEFUMI;NAKAI KENRI;TAKAHASHI EIETSU;UENO KOKI;KABUSHIKI KAISHA TOSHIBA 发明人 SHIINO YASUHIRO;IRIEDA SHIGEFUMI;NAKAI KENRI;TAKAHASHI EIETSU;UENO KOKI
分类号 G11C16/06;G11C16/04 主分类号 G11C16/06
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