发明名称 |
METHOD OF MANUFACTURING QUANTUM DOT LAYER AND QUANTUM DOT OPTOELECTRONIC DEVICE INCLUDING THE QUANTUM DOT LAYER |
摘要 |
A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.
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申请公布号 |
US2013056705(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213482274 |
申请日期 |
2012.05.29 |
申请人 |
KIM TAE-HO;CHO KYUNG-SANG;CHUNG DAE-YOUNG;CHOI BYOUNG-LYONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM TAE-HO;CHO KYUNG-SANG;CHUNG DAE-YOUNG;CHOI BYOUNG-LYONG |
分类号 |
H01L33/06;H01L21/20;H01L29/15 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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