发明名称 METHOD OF MANUFACTURING QUANTUM DOT LAYER AND QUANTUM DOT OPTOELECTRONIC DEVICE INCLUDING THE QUANTUM DOT LAYER
摘要 A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.
申请公布号 US2013056705(A1) 申请公布日期 2013.03.07
申请号 US201213482274 申请日期 2012.05.29
申请人 KIM TAE-HO;CHO KYUNG-SANG;CHUNG DAE-YOUNG;CHOI BYOUNG-LYONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM TAE-HO;CHO KYUNG-SANG;CHUNG DAE-YOUNG;CHOI BYOUNG-LYONG
分类号 H01L33/06;H01L21/20;H01L29/15 主分类号 H01L33/06
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