发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a semiconductor chip having a multilayer interconnect, a first spiral inductor and a second spiral inductor formed in the multilayer interconnect, and an interconnect substrate formed over the semiconductor chip and having a third spiral inductor and a fourth spiral inductor. The third spiral inductor overlaps the first spiral inductor in a plan view. The fourth spiral inductor overlaps the second spiral inductor in the plan view. The third spiral inductor and the fourth spiral inductor collectively include a line, the line being spirally wound in a same direction in the third spiral inductor and the fourth spiral inductor.
申请公布号 US2013056849(A1) 申请公布日期 2013.03.07
申请号 US201213667955 申请日期 2012.11.02
申请人 RENESAS ELECTRONICS CORPORATION;RENESAS ELECTRONICS CORPORATION 发明人 NAKASHIBA YASUTAKA
分类号 H01L27/08 主分类号 H01L27/08
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