发明名称 SEMICONDUCTOR DEVICE
摘要 According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.
申请公布号 US2013056873(A1) 申请公布日期 2013.03.07
申请号 US201113224929 申请日期 2011.09.02
申请人 WADA MAKOTO;YAMAZAKI YUICHI;KAJITA AKIHIRO;SAKATA ATSUKO;KABUSHIKI KAISHA TOSHIBA 发明人 WADA MAKOTO;YAMAZAKI YUICHI;KAJITA AKIHIRO;SAKATA ATSUKO
分类号 H01L23/532 主分类号 H01L23/532
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