发明名称 |
SILICON CARBIDE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL |
摘要 |
An SiC crystal (10) has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material (17). A first SiC crystal (11) is grown by sublimating the first source material (17) through heating and precipitating an SiC crystal. A second source material (12) is formed by crushing the first SiC crystal (11). A second SiC crystal (14) is grown by sublimating the second source material (12) through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained. |
申请公布号 |
EP2565301(A1) |
申请公布日期 |
2013.03.06 |
申请号 |
EP20110774697 |
申请日期 |
2011.02.25 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI, MAKOTO |
分类号 |
C30B29/36;C30B23/00;C30B23/02;C30B23/06;C30B35/00;H01L21/02;H01L21/203 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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