SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve the crystallization of a semiconductor layer comprising a deep ultraviolet device by adopting a porous buffer layer. CONSTITUTION: A first buffer layer(102) made of porous materials is formed on a substrate(101). A second buffer layer(103) of a thin film type is formed on the first buffer layer. The second buffer layer is made of materials with the lower bandgap energy than the bandgap energy of the first buffer layer. A light emitting structure is formed on the second buffer layer. The light emitting structure includes a first conductive semiconductor layer(104), a second conductive semiconductor layer(106), and an active layer(105). An ohmic electrode layer(107) is formed on the second conductive semiconductor layer.