| 摘要 |
<p>PURPOSE: A nonvolatile memory device including a memory cell of a vertical structure and a manufacturing method thereof are provided to reduce manufacturing costs per unit bit by increasing the number of memory gates to improve memory integration. CONSTITUTION: A plurality of gate electrodes(103A,103B,103C,103D) are vertically laminated on a semiconductor substrate(101) and are extended in a first direction. A bonding layer(111A) includes a first region and a second region between the plurality of gate electrodes. The first region is extended in a second direction across the gate electrode on the semiconductor substrate. A cell channel layer(111B) is formed between the plurality of gate electrodes. A charge trap dielectric layer(110) is formed between the gate electrode and the cell channel layer.</p> |
