发明名称 Fabrication of SAM antistiction layers for MEMS devices
摘要 A deposition vapour comprises controlled amounts of a vapour precursor material eg perfluorodecyltrichlorosilane (FDTS) and a vapour reactant material eg water. A carrier gas eg nitrogen is used to transport the precursor and reactant gasses to the MEMS device. The volumetric ratio of the reactive material to the precursor material is greater than 6:1. Employing the described technique provides a self aligned monolayer antistiction layer on a MEMS device and the problematic effects of particulate contamination are avoided even when the volumetric ratio of the reactant material to the precursor material is significantly higher than those ratios previously employed in the art The vapour precursor material can be of a type that provides the MEMS with an anti-stiction coating with the associated vapour reactant material comprising water.
申请公布号 GB2494168(A) 申请公布日期 2013.03.06
申请号 GB20110015105 申请日期 2011.09.01
申请人 MEMSSTAR LIMITED 发明人 ANTHONY O'HARA
分类号 B81B1/00;B81C1/00;C23C16/455 主分类号 B81B1/00
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