| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an IZO sintered body which is high in relative density as 95% or higher by making crystal grain sizes homogeneous and fine, can be reduced in the thickness of a yellow layer generated on the surface, can be stabilized in discharge for sputtering, can obtain a stable and well reproducible transparent conductive film. <P>SOLUTION: In the manufacturing method of indium oxide-zinc oxide sintered body in this invention, after an indium oxide powder and a zinc oxide powder are integrally molded, then heated in an atmosphere of oxygen concentration of 21 vol.% or higher until reaching a temperature of 1,200°C, they are sintered at a temperature of 1,200-1,450°C in an atmosphere of oxygen concentration of lower than 21 vol.%. <P>COPYRIGHT: (C)2007,JPO&INPIT |
