| 摘要 |
A semiconductor device has a first-conductivity-type-channel MOSFET formed on a semiconductor substrate, wherein the first-conductivity-type-channel MOSFET is typically a P-channel MOSFET, and is composed of a gate insulating film and a gate electrode provided over the semiconductor substrate, the gate electrode contains a metal gate electrode provided over the gate insulating film, a metal oxide film provided over the metal gate electrode, and another metal gate electrode provided over metal oxide film. |
