Memory circuits, systems, and operating methods thereof

摘要

A memory circuit includes at least one memory cell for storing a charge representative of a datum. The memory cell is coupled with a word line and a bit line. The memory circuit includes a means for providing a bit line reference voltage VBLref to the bit line, wherein a VBLref/VDD ratio of the bit line reference voltage VBLref to a power voltage VDD is adjustable corresponding to a change of the power voltage VDD.