RESIST PATTERN FORMING METHOD, RESIST PATTERN, POSITIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK

摘要

PURPOSE: A method for forming a resist, the resist pattern, a positive resist composition, a nanoimprint mold, and a photomask are provided to reduce defect generation due to scum. CONSTITUTION: A method for forming a resist pattern comprises: a step of forming a film on a substrate using a positive resist composition; a step of exposing the film with light; and a step of a developing the film using an alkaline developing solution. The thickness of the film is 15-40 nm. The alkaline developing solution contains 0.5-1.1 mass% of alkaline.