Adjustable holding voltage ESD protection device

摘要

An electrostatic discharge (ESD) protection structure comprises a bipolar PNP transistor having an emitter formed by a first high voltage P type implanted region disposed underneath a first P+ region and a collector formed by a second high voltage P type implanted region disposed underneath a second P+ region. The ESD protection structure can have an adjustable threshold voltage by controlling the distance between the first high voltage P type implanted region and the second high voltage P type implanted region. Based upon a basic ESD protection structure, the ESD protection device can provide a reliable ESD protection for semiconductor devices having different voltage ratings.