发明名称 Method of manufacturing semiconductor device
摘要 It is aimed at improving the reliability of a semiconductor device. In a POP having an upper package stacked on a lower package, an opening of a first solder resist film in a first region between a first group of lands arranged at the periphery of an front surface of a wiring substrate of the lower package and a second group of lands arranged in a central part is filled with a second solder resist film, and thereby the formation of a starting point of cracks in the opening becomes unlikely to suppress occurrence of cracks and improve the reliability of the POP.
申请公布号 US8389339(B2) 申请公布日期 2013.03.05
申请号 US201113235247 申请日期 2011.09.16
申请人 TANUMA YUSUKE;ISHIKAWA TOSHIKAZU;RENESAS ELECTRONICS CORPORATION 发明人 TANUMA YUSUKE;ISHIKAWA TOSHIKAZU
分类号 H01L21/58 主分类号 H01L21/58
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