发明名称 |
Method of manufacturing semiconductor device |
摘要 |
It is aimed at improving the reliability of a semiconductor device. In a POP having an upper package stacked on a lower package, an opening of a first solder resist film in a first region between a first group of lands arranged at the periphery of an front surface of a wiring substrate of the lower package and a second group of lands arranged in a central part is filled with a second solder resist film, and thereby the formation of a starting point of cracks in the opening becomes unlikely to suppress occurrence of cracks and improve the reliability of the POP.
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申请公布号 |
US8389339(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US201113235247 |
申请日期 |
2011.09.16 |
申请人 |
TANUMA YUSUKE;ISHIKAWA TOSHIKAZU;RENESAS ELECTRONICS CORPORATION |
发明人 |
TANUMA YUSUKE;ISHIKAWA TOSHIKAZU |
分类号 |
H01L21/58 |
主分类号 |
H01L21/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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