发明名称 |
Electrostatic discharge (ESD) protection circuit |
摘要 |
An electrostatic discharge (ESD) protection circuit includes at least one bipolar transistor. At least one isolation structure is disposed in a substrate. The at least one isolation structure is configured to electrically isolate two terminals of the at least one bipolar transistor. At least one diode is electrically coupled with the at least one bipolar transistor, wherein a junction interface of the at least one diode is disposed adjacent the at least one isolation structure. |
申请公布号 |
US8390024(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20100757612 |
申请日期 |
2010.04.09 |
申请人 |
REN LIPING;TUAN HSIAO-CHIN;HO DAH-CHUEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
REN LIPING;TUAN HSIAO-CHIN;HO DAH-CHUEN |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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