RESISTANCE CHANGING MEMORY DEVICE AND THEREFOR METHOD OF CURRENT TRIMMING

摘要

PURPOSE: A resistance change memory device and a current trimming method thereof are provided to increase the yield of the resistance change memory device by minimizing a reset program error or a set recovery program error. CONSTITUTION: A resistance change memory device includes a writing circuit(20) and an array(70) of resistance change memory cells. The writing circuit resets the selected memory cells with a high resistant state by applying a reset current to the selected memory cell in the array of the resistance memory cells in a program operation mode. The level of a reset current depends on an initial reset current distribution about the array of the resistance change memory cells.