| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving productivity and reliability. <P>SOLUTION: A manufacturing method of a semiconductor device 1 comprises the steps of: preparing a laminate 3 obtained by laminating a base material 10, a resin layer 11, a semiconductor chip 12, a resin layer 13, a semiconductor chip 14, a resin layer 15, a semiconductor chip 16, a resin layer 17, and a semiconductor chip 18; and soldering between terminals 101 and 121, between terminals 122 and 141, between terminals 142 and 161, and between terminals 162 and 181 (terminals for connection) by heating the laminate 3 at a temperature higher than or equal to the melting points of solder layers 121A, 141A, 161A, and 181A of the laminate 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
