| 摘要 |
<p>1281380 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 9 Oct 1969 [12 Oct 1968] 49688/69 Heading H1K A semi-conductor device includes a region 3 of one conductivity type, a region 4 of the opposite conductivity type, and at least one further region, 6, also of the opposite conductivity type extending laterally around the region 4 and forming guard ring(s), the surface of the device including an insulating layer 8 on which is formed a conductive layer, part 16 of which extends laterally around region 4 within the innermost guard ring, and part 18 of which makes contact to the region 3 beyond the guard ring(s). Parts 16 and 18 of the conductive layer are joined by narrow portions (17), Fig. 1 (not shown). The device may be a diode, or a transistor, as shown, including emitter region 11 of the one conductivity type, interdigitated with base region 4. Part 20 of the collector region 3 may be heavily doped to form a low resistance contact to part 18. The parts 16, 18 may be continuous or discontinuous. In an alternative embodiment, the conductive layer may consist of the part 16 and a tab only extending to the region 3. The substrate may be of silicon, germanium or a III-V compound, and the insulation layer 8 may be of silicon dioxide or silicon nitride. Electrodes may be of gold plated molybdenum, or aluminium. Dopants may be of boron and phosphorus. The arrangement is said to provide a stable, high voltage device by reducing the surface charges normally induced in the layer 8 within the guard ring(s).</p> |
