发明名称 HIGH-SIDE SWITCH CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a high-side switch circuit that allows improvement of breakdown resistance while performing predetermined switching operation. <P>SOLUTION: A high-side switch circuit 100 outputting a power-supply voltage by switching includes: a first output MOS transistor M1 in which one end is connected to a power-supply terminal 1 to which a power-supply voltage Vcc is applied; a second output MOS transistor M2 in which one end is connected to the other end of the first output MOS transistor and the other end is connected to a voltage output terminal 2; a current detection circuit 6 that detects a current flowing through the first output MOS transistor and outputs a detection signal based on the detection result; a first gate driver 4 that applies a first control voltage to a gate of the first output MOS transistor so that the first output MOS transistor operates in the linear region; and a second gate driver 5 that applies a second control voltage to a gate of the second output MOS transistor so that the second output MOS transistor operates in the linear region. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013046254(A) 申请公布日期 2013.03.04
申请号 JP20110182974 申请日期 2011.08.24
申请人 TOSHIBA CORP 发明人 SATO YUKI;TSURUMI HIROYUKI
分类号 H03K17/10;H03K17/687 主分类号 H03K17/10
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