发明名称 |
Stacked semiconductor laser diode |
摘要 |
The present invention relates to an arrangement of semiconductor diode lasers stacked on top of one another, which is arranged on a substrate ( 1 ). A first diode laser ( 12 ) is arranged on the substrate ( 1 ), and a second diode laser ( 13 ) is arranged on the first diode laser ( 12 ). Between the first diode laser ( 12 ) and the second diode laser ( 13 ) there is a contact layer ( 6 ). The contact layer ( 6 ) comprises a first conductive layer ( 18 ) of a first conduction type and a second conductive layer ( 20 ) of a second conduction type and an interlayer ( 19 ) which is arranged between the first and second conductive layers ( 18, 20 ).
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申请公布号 |
US2005089073(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20030432187 |
申请日期 |
2003.09.25 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
BEHRINGER MARTIN;EBELING KARL;KNODL THOMAS;LUFT JOHANN |
分类号 |
H01S5/32;H01S5/40;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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