| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of inhibiting deterioration in device characteristics. <P>SOLUTION: A semiconductor device comprises: a silicon substrate 11; a silicon carbide film 12 formed on a surface of the silicon substrate 11; a mask material 13 formed on a surface of the silicon carbide film 12 and having an opening 13h; a single crystal silicon carbide film 14 epitaxially grown from the silicon carbide film 12 exposed in the opening 13h, and covering the silicon carbide film 12 and the mask material 13; and a semiconductor element 20 formed on a surface of the single crystal silicon carbide film 14. On the mask material 13, an associating part 12Sb formed by association of the single crystal silicon carbide film 14 exists. The semiconductor element 20 includes a body contact region 21. The body contact region 21 is arranged at a location overlapping the association part 12Sb when viewed from a direction orthogonal to the surface of the silicon substrate 11. <P>COPYRIGHT: (C)2013,JPO&INPIT |
