SEMICONDUCTOR WAFER, LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTION DEVICE, OPTICAL SENSOR DEVICE, AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR WAFER

摘要

A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≰x≰0.68) layer and a GaAs1-ySby (0.25≰y≰0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.