发明名称 PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN SILICON WAFERS
摘要 <p>Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.</p>
申请公布号 WO2012167104(A4) 申请公布日期 2013.02.28
申请号 WO2012US40492 申请日期 2012.06.01
申请人 MEMC SINGAPORE PTE, LTD.;FALSTER, ROBERT J.;VORONKOV, VLADIMIR V. 发明人 FALSTER, ROBERT J.;VORONKOV, VLADIMIR V.
分类号 H01L31/18 主分类号 H01L31/18
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