发明名称 |
CONSTANT CURRENT SEMICONDUCTOR DEVICE HAVING A SCHOTTKY BARRIER |
摘要 |
This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.
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申请公布号 |
US2013049160(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
US201113219838 |
申请日期 |
2011.08.29 |
申请人 |
TSAI SHEAU-FENG;HUANG WEN-PING;HU TZUU-CHI;FORMOSA MICROSEMI CO., LTD. |
发明人 |
TSAI SHEAU-FENG;HUANG WEN-PING;HU TZUU-CHI |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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地址 |
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