| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of reducing a difference in plasma state or interior of process chamber between a plurality of semiconductor processing apparatuses or reactors. <P>SOLUTION: A plasma processing apparatus processes a wafer 107 by using plasma while supplying, through a matching unit 124, an electric power from a high frequency power source 125 to an electrode arranged in a sample stage 108 in a process chamber 120 within a reactor 101. A characteristic data contains intensity of plasma emission against change in electric power value detected by fluctuating the electric power of an electric field to a plurality of values during the process, a magnitude of temporal fluctuation in intensity of the plasma emission, a matching position of the matching unit, and change in voltage value of the high frequency electric power supplied to the electrode. A specific value of the electric power at a transition point of values of at least two kinds of data in the characteristic data is matched to a specific value detected using the characteristic data that is detected during the processing of the wafer of the same kind as the stated wafer in a separate reactor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
