NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an inexpensive nonvolatile semiconductor storage device having high reliability.

SOLUTION: In a nonvolatile semiconductor storage device, memory strings include: a semiconductor layer having a pair of pillar parts each extending in a vertical direction with respect to a substrate and a connection part formed to connect bottoms of the pair of pillar parts; a charge storage layer formed to surround lateral faces of the pillar parts; a first insulation film including the lateral faces of the pillar parts and the charge storage layer; a first conductive layer formed to cover the lateral faces of the pillar parts and the first insulation film; a second insulation film formed around the connection part; and a second conductive layer formed on the connection part via a gate insulation film.

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