| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas barrier film capable of achieving a high productivity, a high gas barrier performance and a high gas barrier stability (hygrothermal resistance, bending durability), to provide a method for producing the gas barrier film, and to provide an electronic device using the gas barrier film. <P>SOLUTION: The gas barrier film against three gases having a resin substrate 4, at least one barrier layer 2, and an adjacent layer 1 which is located adjacent to the barrier layer at least at the substrate side, is characterized in satisfying the following conditions (1) and (2). (1) The adjacent layer 1 has a region including at least M atom (M denotes Si, Ti, Zr, Al and Zn), O atom and C atom at the same time, and an atomic composition ratio of C/M is 0.2-2.2 and an atomic composition ratio of O/M is 1.0-2.0, (2) the barrier layer has a region including at least Si atom and N atom at the same time, and an atomic composition ratio of N/Si is 0.3-0.8 and an atomic composition ratio of C/Si is <0.1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
