| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD film deposition apparatus that can achieve efficient and favorable film forming by forming a thin film on both surfaces of a substrate. <P>SOLUTION: The plasma CVD film deposition apparatus 1 for continuously forming a thin layer on a long substrate 100 while continuously conveying the substrate 100 in a vacuum chamber 90. The plasma CVD film deposition apparatus is characterized in that a first film forming roller 31 winds the substrate 100 while in contact with one surface 100a of the substrate 100, thereby forming a first thin film on the other surface 100b of the substrate 100, and a second film forming roller 32 winds the substrate 100 while in contact with the other surface 100b of the substrate 100, thereby forming a second thin film on the one surface 100a of the substrate 100. <P>COPYRIGHT: (C)2013,JPO&INPIT |
