发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To avoid a short circuit of inter-transistor connection wiring with a suspension word line. <P>SOLUTION: A semiconductor device (100) comprises: a plurality of active regions (50) arranged in a first direction (X) next to each other each including two vertical transistors (51) arranged at a distance from each other in a second direction (Y) orthogonal to the first direction (X) and a pillar (1a) located between the two vertical transistors (51); a suspension word line (23) arranged at a central position of each of the plurality of active regions (50) and extending in the first direction (X); and inter-transistor connection wiring (21, 10A, 16) extending in the second direction (Y) for connecting the two vertical transistors (51) so as to bypass the suspension word line (23). <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013042056(A) 申请公布日期 2013.02.28
申请号 JP20110179380 申请日期 2011.08.19
申请人 ELPIDA MEMORY INC 发明人 SAITO TOSHIYA
分类号 H01L21/336;H01L21/3205;H01L21/768;H01L23/522;H01L29/41;H01L29/78 主分类号 H01L21/336
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