| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wafer cleaning method capable of reducing pattern collapse by reducing influence of capillary force acting on an uneven pattern in cleaning of a surface of a wafer having the uneven pattern. <P>SOLUTION: The wafer cleaning method comprises: a cleaning step of cleaning a surface of a wafer on which an uneven pattern is formed on the surface with a cleaning liquid; a melt filling step of replacing the cleaning liquid remaining in a recess of the wafer after the cleaning step with a melt for filling in which a treatment agent for filling containing a sublimable material was melt by heating; a cooling deposition step of depositing a solid sublimable material by cooling the melt filled in the recess; and a sublimation and removal step of removing the solid sublimable material deposited on the recess by sublimation. The melt for filling is a melt in which the treatment agent for filling was melt in a temperature range in which the temperature is higher than or equal to a melting point of the contained sublimable material and less than or equal to "melting point plus 25°C". <P>COPYRIGHT: (C)2013,JPO&INPIT |
