发明名称 INTEGRATED CIRCUIT WITH VERTICALLY INTEGRATED PASSIVE VARIABLE RESISTANCE MEMORY AND METHOD FOR MAKING THE SAME
摘要 In one example, an integrated circuit includes memory control logic (e.g., CMOS logic circuit) and passive variable resistance memory disposed above the memory control logic. The passive variable resistance memory, also known as resistive non-volatile memory, may be for example memristors, phase-change memory, or magnetoresistive memory. Each memory cell of the passive variable resistance memory is electrically connected to the memory control logic through at least one vertical interconnect accesses (vias). For example, the operation (e.g., write/read) of each passive variable resistance memory cell is controlled by the memory control logic. The integrated circuit may also include processor logic operatively coupled to the memory control logic.
申请公布号 US2013051117(A1) 申请公布日期 2013.02.28
申请号 US201113216610 申请日期 2011.08.24
申请人 EN WILLIAM G.;WEISS DON R.;ADVANCED MICRO DEVICES, INC. 发明人 EN WILLIAM G.;WEISS DON R.
分类号 G11C11/21;G06F17/50;H01L21/20;H01L47/00 主分类号 G11C11/21
代理机构 代理人
主权项
地址