发明名称 |
DEPOSITION SYSTEMS INCLUDING A PRECURSOR GAS FURNACE WITHIN A REACTION CHAMBER, AND RELATED METHODS |
摘要 |
<p>Deposition systems include a reaction chamber, a substrate support structure disposed within the chamber for supporting a substrate within the reaction chamber, and a gas input system for injecting one or more precursor gases into the reaction chamber. The gas input system includes at least one precursor gas furnace disposed at least partially within the reaction chamber. Methods of depositing materials include separately flowing a first precursor gas and a second precursor gas into a reaction chamber, flowing the first precursor gas through at least one precursor gas flow path extending through at least one precursor gas furnace disposed within the reaction chamber, and, after heating the first precursor gas within the at least one precursor gas furnace, mixing the first and second precursor gases within the reaction chamber over a substrate.</p> |
申请公布号 |
WO2013027098(A1) |
申请公布日期 |
2013.02.28 |
申请号 |
WO2012IB01504 |
申请日期 |
2012.07.31 |
申请人 |
SOITEC;BERTRAM, RONALD, THOMAS, JR.;LANDIS, MICHAEL |
发明人 |
BERTRAM, RONALD, THOMAS, JR.;LANDIS, MICHAEL |
分类号 |
C23C16/30;C23C16/455;C30B25/14;H01L21/205 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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