SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP

摘要

The present invention is applicable to a semiconductor device having a plurality of chips being stacked with a TSV structure in which adjacent ones of the chips are connected to each other via a plurality of through electrodes. Each of the chips includes a plurality of TSV array portions provided so as to correspond to a plurality of channels. The TSV array portions include a TSV array portion that contributes to an input and an output depending upon the number of the chips being stacked, and a pass-through TSV array portion that is not connected to an input/output circuit.