SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

In this silicon carbide semiconductor device, a trench (6) reaches a drift layer (2) by penetrating a source region (4) and a first gate region (3). A channel layer (7) of a first conductivity type is formed on the inner wall of the trench (6) by epitaxial growth. A second gate region (8) of a second conductivity type is formed on the channel layer (7). The front end portion of the trench (6) is provided with a first recess (13) which is formed to be deeper than the thickness of the source region (4) so that the source region (4) is removed in the front end portion of the trench (6). The corner portion of the first recess (13) is covered with a layer (16) of the second conductivity type.