发明名称 HIGH EFFICIENCY PLASMA SOURCE
摘要 <p>A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.</p>
申请公布号 WO2013028313(A1) 申请公布日期 2013.02.28
申请号 WO2012US48790 申请日期 2012.07.30
申请人 MATTSON TECHNOLOGY, INC.;NAGORNY, VLADIMIR;CRAPUCHETTES, CHARLES 发明人 NAGORNY, VLADIMIR;CRAPUCHETTES, CHARLES
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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