| 摘要 |
<p>A method for fabricating an integrated circuit includes forming a first electrode, forming a heater element coupled to the first electrode, forming a cavity over the heater element whereby the cavity is laterally surrounded by a first dielectric material and a second dielectric material, depositing resistance changing material into the cavity, and forming a second electrode over the resistance changing material. Forming the heater element includes depositing a third dielectric material over the first electrode, structuring the third dielectric material by means of a line-lithography-process, and depositing the heater material over the third dielectric material. Forming the cavity includes depositing a sacrificial material and structuring the sacrificial material by means of a line-lithography-process.</p> |
